Title:
抵抗変化素子及びその製造方法
Document Type and Number:
Japanese Patent JP5062180
Kind Code:
B2
Abstract:
[Problems] providing a resistance change element capable of reducing the amount of current per cell, as compared with the conventional one, and a method of manufacturing the same. [Means of solving] In a resistance change element (ReRAM) storing data by utilizing change in resistance of a resistance change element 71, the resistance change element 71 is configured of a lower electrode 67a made of a noble metal such as Pt, a transition metal film 68a made of a transition metal such as Ni, a transition metal oxide film 69a made of a transition metal oxide such as NiOx, and a lower electrode 70a made of a noble metal such as Pt.
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Inventors:
Hideyuki Noshiro
Application Number:
JP2008550007A
Publication Date:
October 31, 2012
Filing Date:
December 19, 2006
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| JP2005203389A | 2005-07-28 | |||
| JP2005175457A | 2005-06-30 |
Attorney, Agent or Firm:
Keizo Okamoto