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Patent Searching and Data


Title:
Power semiconductor device
Document Type and Number:
Japanese Patent JP6316504
Kind Code:
B2
Abstract:
The purpose of the present invention is to obtain a compact and high-reliability semiconductor device for power in which the holding power between a press-fit terminal and a connector is increased. This semiconductor device (1) for power is provided with: a plurality of lead patterns (23, 24, 25) having one end side connected to one of circuit members that includes a semiconductor element (8) for power and having through-holes at predetermined positions on the other end side; a sealing body (4) formed so as to seal the circuit members; female connectors (5) formed from a main surface (4f) towards a circuit surface (6f) of the sealing body (4); and press-fit terminals (2) having a connector insertion terminal secured to a female connector. The connector insertion terminals have: an anchor part provided toward the front end inserted into the female connector, the anchor part being secured to the bottom and the side surface of the female connector; and a press-fit part provided at a portion of lower insertion depth than that of the anchor part, the press-fit part being connected to a through hole of a lead pattern.

Inventors:
Hiroshi Kawashima
Junji Fujino
Minoru Egusa
Shinya Nakagawa
Tomonori Tanaka
Application Number:
JP2017519118A
Publication Date:
April 25, 2018
Filing Date:
May 09, 2016
Export Citation:
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Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L25/07; H01L23/28; H01L23/48; H01L25/18; H01R12/58; H01R12/68
Domestic Patent References:
JP2013152966A
JP201449582A
JP2012151019A
JP200556805A
JP2006210230A
JP2000260513A
Foreign References:
WO2011125747A1
Attorney, Agent or Firm:
Masuo Oiwa
Takenaka Ikuo
Keigo Murakami
Kenji Yoshizawa