Title:
A semiconductor device and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6021032
Kind Code:
B2
Abstract:
A semiconductor device includes a first silicon carbide semiconductor layer of a first conductive type that is positioned on a front surface of a substrate of the first conductive type, a transistor region that includes transistor cells, a Schottky region, and a boundary region. The boundary region includes a second body region and a gate connector that is arranged on the second body region via an insulating film and electrically connected with a gate electrode. The Schottky region includes a Schottky electrode that is arranged on the first silicon carbide semiconductor layer.
Inventors:
Masao Uchida
Osamu Kusumoto
Noriyuki Horikawa
Osamu Kusumoto
Noriyuki Horikawa
Application Number:
JP2015096524A
Publication Date:
November 02, 2016
Filing Date:
May 11, 2015
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L27/04; H01L29/06; H01L29/12; H01L29/47; H01L29/78; H01L29/872
Domestic Patent References:
| JP2003133557A | ||||
| JP2009194127A | ||||
| JP2009094203A | ||||
| JP2003229570A | ||||
| JP2009253139A | ||||
| JP2006524432A | ||||
| JP2009535849A |
Foreign References:
| WO2007013367A1 |
Attorney, Agent or Firm:
Seiji Okuda
Osamu Kita
Michi Kajitani
Akiko Miyake
Hidetaka Okabe
Tohru Kawakita
Yu Tanaka
Osamu Kita
Michi Kajitani
Akiko Miyake
Hidetaka Okabe
Tohru Kawakita
Yu Tanaka