Title:
半導体温度センサおよびこれを備えた半導体装置
Document Type and Number:
Japanese Patent JP5758793
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor temperature sensor which can be manufactured easily and has improved accuracy.SOLUTION: A semiconductor temperature sensor comprises a first region 131 and a second region 132 formed from semiconductor layers, a pair of first electrodes 127a, 127b and a pair of second electrodes 128a, 128b provided in both terminal portions of the first region and the second region, respectively, and wiring which connects the first region and the second region in parallel via the electrodes. In the semiconductor layer of the first region, an impurity of a first conductivity type is introduced with a first concentration N1. In the semiconductor layer of the second region, an impurity of the first conductivity type is introduced with the first concentration N1 and an impurity of a second conductivity type is introduced with a second concentration N2 higher than the first concentration N1. When a sectional area perpendicular to a conduction direction of the first region is defined as A1, a distance in the conduction direction is defined as L1, mobility of a carrier in the first region is first mobility μ1, a sectional area perpendicular to a conduction direction of the second region is defined as A2, a distance in the conduction direction is defined as L2 and mobility of a carrier in the second region is second mobility μ2, an expression (1) is satisfied.
Inventors:
Soeno Akitaka
Toshimasa Yamamoto
Yukihiko Watanabe
Shigemasa Soejima
Toshimasa Yamamoto
Yukihiko Watanabe
Shigemasa Soejima
Application Number:
JP2011279648A
Publication Date:
August 05, 2015
Filing Date:
December 21, 2011
Export Citation:
Assignee:
トヨタ自動車株式会社
株式会社デンソー
株式会社デンソー
International Classes:
G01K7/18; H01L21/822; H01L27/04; H01L37/00
Domestic Patent References:
| JP61208862A | ||||
| JP8125127A | ||||
| JP6053417A |
Attorney, Agent or Firm:
Kaiyu International Patent Office