Title:
分周回路、及び分周回路を用いた半導体装置
Document Type and Number:
Japanese Patent JP5871715
Kind Code:
B2
Abstract:
A semiconductor device with low power consumption and a small area is provided. By using a transistor including an oxide semiconductor for a channel as a transistor included in a flip-flop circuit, a divider circuit in which the number of transistors is small, power consumption is low, and the area is small can be achieved. By using the divider circuit, a semiconductor device which operates stably and is highly reliable can be provided.
Inventors:
Masashi Fujita
Yukio Maebashi
Yukio Maebashi
Application Number:
JP2012119536A
Publication Date:
March 01, 2016
Filing Date:
May 25, 2012
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H03K23/00; H03K19/096
Domestic Patent References:
| JP52014341A | ||||
| JP56096532A | ||||
| JP51003163A | ||||
| JP9232942A | ||||
| JP2008216529A | ||||
| JP2013009297A |