Title:
A semiconductor device having a trench gate structure in a semiconductor body having a hexagonal lattice
Document Type and Number:
Japanese Patent JP6324425
Kind Code:
B2
Abstract:
A semiconductor device with a trench gate structure in a semiconductor body with a hexagonal crystal lattice is disclosed. In an embodiment a semiconductor device includes a semiconductor body with a hexagonal crystal lattice, wherein a mean surface plane of a first surface of the semiconductor body is tilted with respect to a <1-100> crystal direction of the hexagonal crystal lattice by an off-axis angle, a trench gate structure extending into the semiconductor body and at least two transistor mesas formed from portions of the semiconductor body and adjoining the trench gate structure, wherein sidewalls of the at least two transistor mesas are aligned with a (11-20) crystal plane and deviate from a normal to the mean surface plane by at most 5 degrees, and wherein each transistor mesa comprises a MOS gate channel.
Inventors:
Roman Esteve
Deto Heart Peters
Lorant Rupp
Deto Heart Peters
Lorant Rupp
Application Number:
JP2016041248A
Publication Date:
May 16, 2018
Filing Date:
March 03, 2016
Export Citation:
Assignee:
Infineon Technologies AG
International Classes:
H01L29/12; H01L21/8234; H01L27/06; H01L29/739; H01L29/78
Domestic Patent References:
| JP2014107571A | ||||
| JP2008108824A | ||||
| JP2014127547A | ||||
| JP2014075582A | ||||
| JP2007221012A | ||||
| JP11195788A |
Foreign References:
| US20140021484 |
Attorney, Agent or Firm:
Einzel Felix-Reinhard
Junichi Maekawa
Hiroyasu Ninomiya
Ueshima
Junichi Maekawa
Hiroyasu Ninomiya
Ueshima