Title:
半導体素子
Document Type and Number:
Japanese Patent JP7209338
Kind Code:
B2
Abstract:
Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.
Inventors:
Baek, Kang Son
Na, Jeongho
Han, Tesop
Junghyun, fan
Na, Jeongho
Han, Tesop
Junghyun, fan
Application Number:
JP2018530837A
Publication Date:
January 20, 2023
Filing Date:
November 02, 2017
Export Citation:
Assignee:
Sujo Lekin Semiconductor Company Limited
International Classes:
H01L33/06; H01L21/205; H01L31/10; H01L33/14; H01L33/32
Domestic Patent References:
| JP2012069901A | ||||
| JP2015050247A | ||||
| JP2013008931A | ||||
| JP2008103721A | ||||
| JP2006128607A | ||||
| JP2002299685A |
Foreign References:
| KR1020140062944A | ||||
| US8669585 | ||||
| CN103972334A | ||||
| US20150270436 | ||||
| KR1020150046666A |
Attorney, Agent or Firm:
Sachiko Takeda
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