Title:
SEMICONDUCTOR ELEMENT AND DEVICE
Document Type and Number:
Japanese Patent JP2022119335
Kind Code:
A
Abstract:
To provide a semiconductor element and a device capable of suppressing current collapse and improving sheet carrier concentration.SOLUTION: A semiconductor element 100 includes a first semiconductor layer 110, a second semiconductor layer 120, a third semiconductor layer 130, a fourth semiconductor layer 140, a first intermediate layer 150, a second intermediate layer 160, a source electrode S1, a drain electrode D1, and a gate electrode G1. The bandgap of the second semiconductor layer 120 is larger than the bandgaps of the first semiconductor layer 110 and the third semiconductor layer 130. The bandgap of the first intermediate layer 150 and the second intermediate layer 160 sandwiching the second semiconductor layer 120 is larger than the bandgap of the second semiconductor layer 120.SELECTED DRAWING: Figure 2
Inventors:
SATO TOSHIAKI
OKUNO KOJI
SHINODA DAISUKE
UEMURA TOSHIYA
NARUI HIRONOBU
KAWAI HIROHARU
YAGI SHUICHI
OKUNO KOJI
SHINODA DAISUKE
UEMURA TOSHIYA
NARUI HIRONOBU
KAWAI HIROHARU
YAGI SHUICHI
Application Number:
JP2021016382A
Publication Date:
August 17, 2022
Filing Date:
February 04, 2021
Export Citation:
Assignee:
TOYODA GOSEI KK
PAWDEC KK
PAWDEC KK
International Classes:
H01L21/337; H01L21/338; H01L29/06; H01L29/47; H01L29/872
Attorney, Agent or Firm:
Patent Business Corporation Aichi International Patent Office
Fujitani Osamu
Akinori Isshiki
Tomohiro Kakutani
Fujitani Osamu
Akinori Isshiki
Tomohiro Kakutani
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