Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2022136400
Kind Code:
A
Abstract:
To provide a semiconductor device capable of high integration.SOLUTION: A semiconductor device include: a semiconductor substrate; a first insulating layer formed from a main surface of the semiconductor substrate toward the inside of the semiconductor substrate; and a transistor formed on the first insulating layer. The transistor has: a first semiconductor layer formed on the first insulating layer and insulated from the semiconductor substrate; a second insulating layer provided on a second area among a first area, the second area and a third area lined up in a first direction along the main surface of the first semiconductor layer in order; and a first conductive layer provided on the second insulating layer. A first contact is connected to the first area of the first semiconductor layer, a second contact is connected to the third area of the first semiconductor layer, and a third contact is connected to the first conductive layer.SELECTED DRAWING: Figure 12
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Inventors:
KUTSUKAKE HIROYUKI
Application Number:
JP2021035988A
Publication Date:
September 21, 2022
Filing Date:
March 08, 2021
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L29/786; H01L21/336; H01L21/8234; H01L27/11526; H01L27/11548; H01L27/11556; H01L27/11573; H01L27/11575; H01L27/11582
Attorney, Agent or Firm:
Patent Attorney Corporation Kisaragi International Patent Office