Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023004072
Kind Code:
A
Abstract:
To provide a semiconductor device that improves frequency response for the control of an input capacitance and a feedback capacitance.SOLUTION: A semiconductor device includes a capacitance adjusting region. The capacitance adjusting region includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a plurality of control trench gates. The first semiconductor layer is provided as a surface layer at an upper surface of the semiconductor substrate. The second semiconductor layer is selectively provided on an upper surface side of the first semiconductor layer. The second semiconductor layer contacts a side surface of each of the control trench gates. The first semiconductor layer and the second semiconductor layer are electrically connected to an emitter electrode of a transistor. A control trench electrode of at least one control trench gate is electrically connected to a gate electrode of the transistor.SELECTED DRAWING: Figure 13
Inventors:
SONEDA SHINYA
KONISHI KAZUYA
FURUKAWA AKIHIKO
KONISHI KAZUYA
FURUKAWA AKIHIKO
Application Number:
JP2021105553A
Publication Date:
January 17, 2023
Filing Date:
June 25, 2021
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/78; H01L21/822; H01L21/8234; H01L29/06; H01L29/12; H01L29/739; H01L29/861
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita