Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023093542
Kind Code:
A
Abstract:
To provide a transistor that uses an oxide semiconductor layer having electrical characteristics required in accordance with applications and to provide a semiconductor device having the transistor.SOLUTION: In a bottom-gate-type transistor in which at least a gate electrode layer, a gate insulating film, and a semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers having different energy gaps from each other is used as the semiconductor layer. Oxygen or/and a dopant may be introduced into the oxide semiconductor stacked layer.SELECTED DRAWING: Figure 1
Inventors:
YAMAZAKI SHUNPEI
SHINOHARA SOJI
SHINOHARA SOJI
Application Number:
JP2023061361A
Publication Date:
July 04, 2023
Filing Date:
April 05, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; G02F1/1368; H01L21/336; H01L27/146; H05B33/14; H10B12/00; H10K50/10; H10K59/12