Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023162778
Kind Code:
A
Abstract:
To easily manufacture a semiconductor device.SOLUTION: A semiconductor device includes: a control circuit including a first conductivity-type semiconductor layer 33 and configured to drive a power transistor; a power terminal electrically connected to the semiconductor layer 33 and configured to be able to apply an operating voltage of the control circuit; a ground terminal electrically connected to the control circuit; and an ESD protection circuit 50 electrically connected to both of the power terminal and the ground terminal and configured to protect the control circuit from a current caused by static electricity applied to the power terminal. The ESD protection circuit 50 includes a protective transistor 51 using the semiconductor layer 33. The protective transistor 51 is a bipolar transistor composed of the semiconductor layer 33, a second conductivity-type first well region 61 formed on a front side surface 33s of the semiconductor layer 33, and a first conductivity-type second well region 62 formed on a front side surface of the first well region 61.SELECTED DRAWING: Figure 4
Inventors:
OSUMI YUJI
Application Number:
JP2022073407A
Publication Date:
November 09, 2023
Filing Date:
April 27, 2022
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H01L27/06; H01L21/822; H01L21/8234; H01L29/06; H01L29/12; H01L29/739; H01L29/78; H01L29/861
Attorney, Agent or Firm:
Makoto Onda
Hironobu Onda
Hironobu Onda