Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023169180
Kind Code:
A
Abstract:
To reduce parasitic capacitance in a semiconductor device having a transistor which has an oxide semiconductor.SOLUTION: A transistor has: a first gate electrode; a first gate insulation film on the first gate electrode; an oxide semiconductor film on the first gate insulation film; a source electrode electrically connected to the oxide semiconductor film; and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film has a first oxide semiconductor film on a first gate electrode side and a second oxide semiconductor film on the first oxide semiconductor film. The first oxide semiconductor film has ratio of the number of In atoms larger than ratio of the number of M (M represents Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) atoms. The second oxide semiconductor film has ratio of the number of In atoms smaller than that of the first oxide semiconductor film.SELECTED DRAWING: Figure 1
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Inventors:
MIYAKE HIROYUKI
HIZUKA JUNICHI
OKAZAKI KENICHI
KUROSAKI DAISUKE
SHIMA YUKINORI
SAITO AKIRA
HIZUKA JUNICHI
OKAZAKI KENICHI
KUROSAKI DAISUKE
SHIMA YUKINORI
SAITO AKIRA
Application Number:
JP2023138223A
Publication Date:
November 29, 2023
Filing Date:
August 28, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G09F9/30; H01L29/786; H01L21/8234; H01L27/088; H01L27/146; H10B12/00; H10B41/70; H10B99/00; H10K39/32