Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023174725
Kind Code:
A
Abstract:
To provide a transistor including an oxide semiconductor film with higher field effect mobility and higher reliability.SOLUTION: A semiconductor device includes an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film on the first insulating film, a second insulating film and a third insulating film on the oxide semiconductor film, and a gate electrode on the second insulating film. In particular, the second insulating film includes a silicon oxynitride film. Because of excess oxygen by an oxygen plasma process, oxygen can be supplied to the oxide semiconductor film efficiently.SELECTED DRAWING: Figure 44
Inventors:
KAMINAGA MASAMI
HIZUKA JUNICHI
HAMOCHI TAKASHI
HOSAKA HIROYASU
HIZUKA JUNICHI
HAMOCHI TAKASHI
HOSAKA HIROYASU
Application Number:
JP2023171145A
Publication Date:
December 08, 2023
Filing Date:
October 02, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; H01L21/822; H10B12/00
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