Title:
半導体装置
Document Type and Number:
Japanese Patent JP7163064
Kind Code:
B2
Abstract:
A semiconductor device capable of retaining data for a long period is provided. The semiconductor device includes a first memory cell and a second memory cell. The first memory cell includes a first transistor. The second memory cell includes a second transistor. The threshold voltage of the second transistor is higher than the threshold voltage of the first transistor. The first transistor includes a first metal oxide. The second transistor includes a second metal oxide. Each of the first metal oxide and the second metal oxide includes a channel formation region. Each of the first metal oxide and the second metal oxide includes In, an element M (M is Al, Ga, Y, or Sn), and Zn. The atomic ratio of the element M to In in the second metal oxide is greater than that in the first metal oxide.
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Inventors:
Kiyoshi Kato
Application Number:
JP2018095032A
Publication Date:
October 31, 2022
Filing Date:
May 17, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336; H01L21/8229; H01L21/8234; H01L21/8239; H01L21/8242; H01L27/088; H01L27/102; H01L27/105; H01L27/108; H01L27/1156; H01L29/788; H01L29/792
Domestic Patent References:
| JP2016212944A | ||||
| JP2017028288A | ||||
| JP2017143239A | ||||
| JP2016006861A |
Foreign References:
| US20170040424 | ||||
| US20160336055 | ||||
| US20170025544 |