半導体装置

Japanese Patent JP7201336

B2

A semiconductor device includes a semiconductor layer of a first conductivity type having a first main surface at one side and a second main surface at another side, a trench gate structure including a gate trench formed in the first main surface of the semiconductor layer, and a gate electrode embedded in the gate trench via a gate insulating layer, a trench source structure including a source trench formed deeper than the gate trench and across an interval from the gate trench in the first main surface of the semiconductor layer, a source electrode embedded in the source trench, and a deep well region of a second conductivity type formed in a region of the semiconductor layer along the source trench, a ratio of a depth of the trench source structure with respect to a depth of the trench gate structure being not less than 1.5 and not more than 4.0, a body region of the second conductivity type formed in a region of a surface layer portion of the first main surface of the semiconductor layer between the gate trench and the source trench, a source region of the first conductivity type formed in a surface layer portion of the body region, and a drain electrode connected to the second main surface of the semiconductor layer.

Minoru Nakagawa
Yuki Nakano
Masatoshi Akeda
Maya Ueno
Seigo Mori
Kenji Yamamoto

JP2018094956A

January 10, 2023

May 16, 2018

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ROHM Co., Ltd.

H01L21/28; H01L29/78; H01L21/336; H01L21/8234; H01L27/06; H01L29/06; H01L29/12; H01L29/41; H01L29/417; H01L29/739; H01L29/861; H01L29/868; H01L29/872

JP2015079894A
JP2010505270A
JP2017055005A
JP2014038988A

WO2016006696A1

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