半導体装置 - 株式会社豊田中央研究所

Title:

半導体装置

Document Type and Number:

Japanese Patent JP7204454

Kind Code:

B2

Abstract:

To provide a semiconductor device having high reliability against thermal expansion due to self-heating when a load is short-circuited.SOLUTION: A semiconductor device 1 having a compound semiconductor 8 has a specific region 18 formed in a current concentration region 40 for generating heat in response to a large current flowing when a load is short-circuited. The specific region 18 of the compound semiconductor 8 includes a specific material having a linear expansion coefficient smaller than that of the compound semiconductor 8.SELECTED DRAWING: Figure 1

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Inventors:

Katsuhiro Kuchiki
Yusuke Yamashita
Soejima Shigemasa
Yukihiko Watanabe
Keita Kataoka
Saito Jun
Urakami Yasushi

Application Number:

JP2018225629A

Publication Date:

January 16, 2023

Filing Date:

November 30, 2018

Export Citation:

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Assignee:

株式会社豊田中央研究所

International Classes:

H01L29/78; H01L21/336; H01L29/12

Domestic Patent References:

JP2007288172A
JP2009164558A
JP2017041613A
JP2012190982A

Attorney, Agent or Firm:

Patent Attorney Corporation Kaiyu International Patent Office

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