Title:
半導体装置
Document Type and Number:
Japanese Patent JP7287181
Kind Code:
B2
Abstract:
To provide a semiconductor device equipped with a protective film in which thermal stress is relaxed while maintaining a function of suppressing the influence of disturbance ions.SOLUTION: A semiconductor device includes a semiconductor substrate, and a protective film provided on the semiconductor substrate and extending in a frame shape along the outer peripheral edge of the semiconductor substrate. A plurality of cavities dispersed and arranged in the plane of the protective film are formed in the protective film.SELECTED DRAWING: Figure 3
Inventors:
Mihiro Nakagawa
Application Number:
JP2019151436A
Publication Date:
June 06, 2023
Filing Date:
August 21, 2019
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L21/768; H01L21/312; H01L23/532
Domestic Patent References:
| JP2016134546A | ||||
| JP2018019010A | ||||
| JP2020068223A | ||||
| JP2018181962A | ||||
| JP6283864A |
Foreign References:
| WO2018078799A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Kaiyu International Patent Office