Title:
半導体装置
Document Type and Number:
Japanese Patent JP7366869
Kind Code:
B2
Abstract:
To provide a semiconductor device that can reduce the power loss.SOLUTION: A semiconductor device according to an embodiment includes a first electrode, a semiconductor layer, a first conductive part, a second conductive part, and a second electrode. The semiconductor layer includes a first semiconductor region with a first conductivity type electrically connected to the first electrode, a second semiconductor region with a second conductivity type provided on the first semiconductor region, and a third semiconductor region with the first conductivity type provided on the second semiconductor region. The first conductive part includes an embedded electrode part provided in the first semiconductor region through a first insulating part. The second conductive part includes a gate electrode part provided on the embedded electrode part through a second insulating part and facing the second semiconductor region through a gate insulating part. The second electrode is provided on the semiconductor layer and is electrically connected to the second semiconductor region and the third semiconductor region. The first conductive part is electrically connected to the second conductive part. The electric resistance of the first conductive part is higher than that of the second conductive part.SELECTED DRAWING: Figure 1
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Inventors:
Tatsuya Nishiwaki
Go Kachi
Go Kachi
Application Number:
JP2020151573A
Publication Date:
October 23, 2023
Filing Date:
September 09, 2020
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
International Classes:
H01L29/78; H01L21/3205; H01L21/329; H01L21/768; H01L23/522; H01L29/12; H01L29/41; H01L29/866
Domestic Patent References:
| JP2018082202A | ||||
| JP2016152357A | ||||
| JP2019114643A |
Foreign References:
| WO2017122318A1 |
Attorney, Agent or Firm:
Patent Attorney Firm iX