Title:
半導体装置
Document Type and Number:
Japanese Patent JP7386956
Kind Code:
B2
Abstract:
According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, first and second insulating members, and a first member. The third electrode includes a first electrode portion. The first electrode portion is between the first and second electrodes. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The first insulating member includes first and second insulating regions. The second insulating member includes first and second insulating portions. The first insulating portion is between the fourth partial region and the first insulating region. The second insulating portion is between the fifth partial region and the second insulating region. The second semiconductor layer includes first, second, and third semiconductor portions.
Inventors:
Eisuke Kajiwara
Masahiko Kuraguchi
Akira Mukai
Masahiko Kuraguchi
Akira Mukai
Application Number:
JP2022187033A
Publication Date:
November 27, 2023
Filing Date:
November 24, 2022
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/338; H01L29/06; H01L29/778; H01L29/812
Domestic Patent References:
| JP2014003301A | ||||
| JP2011529639A | ||||
| JP2014003231A |
Foreign References:
| US20070018199 | ||||
| US20100025730 | ||||
| CN102171830A | ||||
| US20130341640 |
Attorney, Agent or Firm:
Patent Attorney Firm iX