Title:
半導体装置
Document Type and Number:
Japanese Patent JP7446119
Kind Code:
B2
Abstract:
There is provided a semiconductor device, including: a semiconductor chip including a main surface; a gate trench formed on the main surface; a first insulating film configured to cover an upper wall surface of the gate trench; a second insulating film configured to cover a lower wall surface of the gate trench; a field trench formed on the main surface so as to be spaced apart from the gate trench, and including a facing wall at a side of the gate trench and a non-facing wall at an opposite side of the facing wall; a third insulating film configured to cover an upper wall surface of the field trench at a side of the facing wall; and a fourth insulating film configured to cover a lower wall surface of the field trench at the side of the facing wall and the non-facing wall.
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Inventors:
Kenju Nagata
Application Number:
JP2020020083A
Publication Date:
March 08, 2024
Filing Date:
February 07, 2020
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L29/78; H01L21/336
Domestic Patent References:
| JP2016167542A | ||||
| JP2013214551A | ||||
| JP2002083963A |
Foreign References:
| US20100140696 | ||||
| US20100140695 | ||||
| US20140264567 | ||||
| US20160043192 |
Attorney, Agent or Firm:
Patent Attorney Corporation Ai Patent Office
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