Title:
半導体装置
Document Type and Number:
Japanese Patent JP7458164
Kind Code:
B2
Abstract:
The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate 100. An electrode connected electrically to the thin film transistor is formed of a silver film 128. A first indium tin oxide (ITO) film 129 is formed on the silver film 128. An alumina (AlOx) film 130 is formed on the first ITO film 129.
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Inventors:
Marina Mochizuki
Isao Suzumura
Isao Suzumura
Application Number:
JP2019192521A
Publication Date:
March 29, 2024
Filing Date:
October 23, 2019
Export Citation:
Assignee:
Japan Display Co., Ltd.
International Classes:
H01L31/10
Domestic Patent References:
| JP2016021380A | ||||
| JP2013251173A | ||||
| JP2013073965A |
Foreign References:
| US20190027550 |
Attorney, Agent or Firm:
Polaire Patent Attorneys Corporation