Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2016171301
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device capable of stably forming a fuse element for adjusting characteristics of the semiconductor integrated circuit device and a manufacturing method of the same.SOLUTION: The semiconductor integrated circuit device and the manufacturing method of the same are capable of reducing a film thickness of an interlayer insulating film on a fuse element to realize stable laser trimming processing by using an amorphous silicon layer formed by a sputtering method as a material to be used for the fuse element and forming it with the same process as that of a metal wiring formation.SELECTED DRAWING: Figure 1
Inventors:
HARADA HIROBUMI
Application Number:
JP2015194573A
Publication Date:
September 23, 2016
Filing Date:
September 30, 2015
Export Citation:
Assignee:
SII SEMICONDUCTOR CORP
International Classes:
H01L21/82; H01L21/3205; H01L21/768; H01L23/522