Title:
A semiconductor laser and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP5920043
Kind Code:
B2
Abstract:
A semiconductor laser includes: a p-type semiconductor substrate; a ridge having an active layer and cladding layers on the semiconductor substrate; a current blocking layer embedding side surfaces of the ridge; and an n-type contact layer on the ridge and the current blocking layer. The current blocking layer includes a first p-type layer, an n-type layer or a hole-trapping insulating semiconductor layer, a second p-type layer, a diffusion inhibiting layer, and a third p-type layer stacked, in order, from the semiconductor substrate. The n-type contact layer includes a p-type inverted region located in a portion of the n-type contact layer, in contact with the third p-type layer. Dopants in the third p-type layer diffuse into the p-type inverted region. The diffusion inhibiting layer is an undoped semiconductor material or a semi-insulating semiconductor material and inhibits dopants in the third p-type layer from being diffused into the active layer.
Inventors:
Naoki Nakamura
Application Number:
JP2012136130A
Publication Date:
May 18, 2016
Filing Date:
June 15, 2012
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01S5/227
Domestic Patent References:
| JP9330882A | ||||
| JP8064899A | ||||
| JP2003204119A |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno
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