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Title:
A semiconductor light emitting element and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP5989318
Kind Code:
B2
Abstract:
There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.

Inventors:
Jung, Tae Sun
Wong, Seok Min
Lee, Syool
Woo, Jung Gun
Application Number:
JP2011219092A
Publication Date:
September 07, 2016
Filing Date:
October 03, 2011
Export Citation:
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Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L33/20; H01L33/38
Domestic Patent References:
JP2010087057A
JP2006128227A
JP2008187059A
JP11274568A
JP2010506382A
JP2005223329A
JP2009231560A
JP2008182110A
JP2007288106A
JP2006339426A
Attorney, Agent or Firm:
Kyosei International Patent Office