Title:
SEMICONDUCTOR STORAGE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2019050243
Kind Code:
A
Abstract:
To provide a semiconductor storage of a high integration degree, and a manufacturing method therefor.SOLUTION: A semiconductor storage includes a semiconductor substrate, a first insulator film provided on the semiconductor substrate, first electric wiring provided on the first insulator film, a first electrode film provided on the first insulator film, a laminate provided on the first electrode film, where a second insulator film and a second electrode film are laminated alternately in a first direction arranged with the semiconductor substrate, the first insulator film and the first electrode film, a first insulation member extending in the first direction, and penetrating the laminate, a first semiconductor film provided around the first insulation member, and connected with the first electrode film, a third insulator film provided around the first semiconductor film, a first conductive member extending in the first direction, and penetrating the laminate and the first electrode film, and connected with the first wiring, and a fourth insulator film provided around the first conductive member. A film structure of the fourth insulator film is the same as that of the third insulator film.SELECTED DRAWING: Figure 3
Inventors:
YAGI MIKIKO
TAKEKIDA HIDEHITO
YAMANAKA TAKAYA
MIZUTANI SEIJI
WADA HIDEO
TAKEKIDA HIDEHITO
YAMANAKA TAKAYA
MIZUTANI SEIJI
WADA HIDEO
Application Number:
JP2017172512A
Publication Date:
March 28, 2019
Filing Date:
September 07, 2017
Export Citation:
Assignee:
TOSHIBA MEMORY CORP
International Classes:
H01L27/11531; H01L21/336; H01L21/8238; H01L27/092; H01L27/11573; H01L27/11575; H01L27/11578; H01L27/11582; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Masahiko Hinataji
Junichi Kozaki
Hiroshi Ichikawa
Tatsutetsu Shirai
Junichi Kozaki
Hiroshi Ichikawa
Tatsutetsu Shirai