Title:
半導体光素子
Document Type and Number:
Japanese Patent JP7259699
Kind Code:
B2
Abstract:
A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.
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Inventors:
Naoki Fujiwara
Yagi Hideki
Alley
Takuo Hiratani
Takehiko Kikuchi
Toshiyuki Nitta
Yagi Hideki
Alley
Takuo Hiratani
Takehiko Kikuchi
Toshiyuki Nitta
Application Number:
JP2019195931A
Publication Date:
April 18, 2023
Filing Date:
October 29, 2019
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01S5/026; G02B6/12; G02B6/122; G02B6/125; H01S5/042; H01S5/10; H01S5/323; H01S5/50
Domestic Patent References:
| JP2016509370A | ||||
| JP2018527746A | ||||
| JP2009238902A | ||||
| JP2002185082A |
Foreign References:
| US20160141836 | ||||
| US20140269800 |
Attorney, Agent or Firm:
Shuhei Katayama