Title:
A semiconductor power module and a device
Document Type and Number:
Japanese Patent JP6130863
Kind Code:
B2
Abstract:
An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a second transistor encased in a second package, the second transistor being mounted over a second conductive portion of the second package. The component further includes a substrate comprising an insulating layer between a first metal layer and a second metal layer. The first package is on one side of the substrate with the first conductive portion being electrically connected to the first metal layer, and the second package is on another side of the substrate with the second conductive portion being electrically connected to the second metal layer. The first package is opposite the second package, with at least 50% of a first area of the first conductive portion being opposite a second area of the second conductive portion.
Inventors:
Woo, Ifen
Application Number:
JP2014558857A
Publication Date:
May 17, 2017
Filing Date:
February 22, 2013
Export Citation:
Assignee:
Transform Incorporated
International Classes:
H01L25/07; H01L21/338; H01L25/18; H01L29/778; H01L29/812
Domestic Patent References:
| JP2001358285A | ||||
| JP2011036017A | ||||
| JP2009141150A |
Foreign References:
| US20110101466 |
Attorney, Agent or Firm:
Yusuke Hiraki
Sekiya Mitsuo
Toshiaki Watanabe
Hidekazu Matsumaru
Hirose Miki
Sekiya Mitsuo
Toshiaki Watanabe
Hidekazu Matsumaru
Hirose Miki
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