Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2023037973
Kind Code:
A
Abstract:
To suppress a decrease in a yield of a semiconductor storage device.SOLUTION: A semiconductor storage device comprises a substrate, a first conductor layer, and a second conductor layer arranged in this order in a first direction and provided separated from each other, a first semiconductor film extending in the first direction, crossing the first conductor layer, and in contact with the second conductor layer, and a first charge storage film provided between the first semiconductor film and the first conductor layer and in contact with the second conductor layer. The first semiconductor film includes a portion composed of an n-type semiconductor at the same height as the first conductor layer.SELECTED DRAWING: Figure 4
Inventors:
SAKATA KOICHI
ARAI SHINYA
HASHIMOTO SUSUMU
MINO AKIRA
OKADA SHUNSUKE
NAKATSUKA KEISUKE
ARAI SHINYA
HASHIMOTO SUSUMU
MINO AKIRA
OKADA SHUNSUKE
NAKATSUKA KEISUKE
Application Number:
JP2021144829A
Publication Date:
March 16, 2023
Filing Date:
September 06, 2021
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H10B43/27; H01L21/336
Attorney, Agent or Firm:
Patent Attorney Corporation Suzue Patent General Office
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