Title:
The sensor device using an organic thin film transistor
Document Type and Number:
Japanese Patent JP6128378
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a sensor device that is highly sensitive, and has a detection capability with a wide dynamic range, and enables sensing information to be taken out as a voltage signal.SOLUTION: A sensor device constitutes a complementary circuit composed of a P-type transistor Tr1 and an N-type transistor Tr2, and at least one of the P-type and N-type transistors is composed of an organic TFT to be used as a sensor element. The organic TFT to be used as the sensor element fulfills a function in which an electric characteristic varies by being subjected to a physical change or by absorbing a specific substance, and the another transistor constituting the complementary circuit is constituted to have no sensor sensitivity. Since the sensor device constitutes the complementary circuit, a detection capability with a wide dynamic range can be imparted, and since a sensor output is output as a voltage value, the complementary circuit constitution can contribute to a simplification of an external circuit constitution.
Inventors:
Daisuke Kumaki
Kenjiro Fukuda
Tokito Shizushi
Kenjiro Fukuda
Tokito Shizushi
Application Number:
JP2013063234A
Publication Date:
May 17, 2017
Filing Date:
March 26, 2013
Export Citation:
Assignee:
Yamagata University
International Classes:
G01L1/18; G01L9/00; G01N27/00; G01P15/12; H01L29/786; H01L51/05
Domestic Patent References:
| JP5203682A | ||||
| JP2009060056A | ||||
| JP2006258661A | ||||
| JP2011060837A | ||||
| JP2011009413A | ||||
| JP2011242153A |
Attorney, Agent or Firm:
Kinoshita Shigeru
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