Title:
センサ装置
Document Type and Number:
Japanese Patent JP7376498
Kind Code:
B2
Abstract:
A flexible semiconductor device including a light-emitting element and a sensor element is provided. The semiconductor device includes a sensor device, a processor, and a communication device. The sensor device includes a first pixel and a second pixel formed over a flexible substrate. The first pixel includes a light-emitting element and a first transistor. The second pixel includes a sensor element having a photoelectric conversion function and a second transistor. Light emitted from the light-emitting element has a peak wavelength. A range of wavelength sensed by the sensor element includes the peak wavelength. A semiconductor layer of the first transistor and a semiconductor layer of the second transistor include the same element. A pixel electrode of the light-emitting element has a function of being electrically connected to the first transistor and a function of blocking diffusion light to the sensor element.
Inventors:
Takashi Nakagawa
Takayuki Ikeda
Takahiro Fukudome
Takayuki Ikeda
Takahiro Fukudome
Application Number:
JP2020550955A
Publication Date:
November 08, 2023
Filing Date:
October 02, 2019
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G01N21/27; G01J1/02; H01L27/146; H01L29/786
Domestic Patent References:
| JP2013073965A | ||||
| JP2016115862A | ||||
| JP2011096668A | ||||
| JP2018106069A | ||||
| JP2017192124A |
Foreign References:
| US20180129852 |
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