Title:
A silicon carbide board for semiconductor devices, and a semiconductor device
Document Type and Number:
Japanese Patent JP6123875
Kind Code:
B2
Abstract:
A silicon carbide substrate (80), comprising: a side surface (SD); and a main surface (M80) surrounded by said side surface; wherein said silicon carbide substrate has a hexagonal crystal structure; said main surface is inclined by an off angle in an off direction from {0001} plane of said hexagonal crystal (HX); and said main surface has such a characteristic that, among the regions emitting photoluminescent light (LL) having a wavelength exceeding 650 nm of said main surface caused by excitation light (LE) having higher energy than band-gap of the hexagonal silicon carbide, the number of those having a dimension of at most 15 µm in a direction perpendicular to said off direction and a dimension in a direction parallel to said off direction not larger than a value obtained by dividing penetration length of said excitation light in the hexagonal silicon carbide by a tangent of said off angle is at most 1 × 104 per 1 cm2.
Inventors:
Makoto Harada
Tsubasa Tsubasa
Tsubasa Tsubasa
Application Number:
JP2015233277A
Publication Date:
May 10, 2017
Filing Date:
November 30, 2015
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B29/36; H01L21/205
Domestic Patent References:
| JP5857959B2 | ||||
| JP2006147848A | ||||
| JP2006349482A | ||||
| JP2007318031A | ||||
| JP2006321707A | ||||
| JP2010095397A | ||||
| JP2007230823A | ||||
| JP2003277193A |
Attorney, Agent or Firm:
Fukami patent office
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