Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2018037533
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a SiC semiconductor device having accurately controlled film thickness; and provide a manufacturing method of the SiC semiconductor device.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises the steps of: applying when measuring a film thickness of a p type base region 3, infrared light from the p type base region 3 side on an ntype substrate 1 where the p type base region 3 and an ntype drift layer 2 are grown; measuring interference light of reflected light from a surface of the p type base region 3 and reflected light from an interface between the ntype drift layer 2 and the nsubstrate 1 but not between the p type base region 3 and the ntype drift layer 2. In this way, a two-layer film thickness T2 as a total film thickness of the p type base region 3 and the ntype drift layer 2 is measured. The silicon carbide semiconductor device manufacturing method comprises the step of calculating a film thickness of the p type base region 3 by subtracting a single-layer film thickness as a film thickness of the ntype drift layer 2 from the two-layer film thickness T2.SELECTED DRAWING: Figure 5
Inventors:
AMANO YO
SATOMURA TAKAYUKI
TAKEUCHI YUICHI
SUZUKI KATSUMI
AOI SACHIKO
SATOMURA TAKAYUKI
TAKEUCHI YUICHI
SUZUKI KATSUMI
AOI SACHIKO
Application Number:
JP2016169815A
Publication Date:
March 08, 2018
Filing Date:
August 31, 2016
Export Citation:
Assignee:
DENSO CORP
TOYOTA MOTOR CORP
TOYOTA MOTOR CORP
International Classes:
H01L21/336; H01L21/66; H01L29/12; H01L29/78
Domestic Patent References:
| JP2014236189A | 2014-12-15 | |||
| JP2015072999A | 2015-04-16 | |||
| JPH10223715A | 1998-08-21 | |||
| JP2003065724A | 2003-03-05 | |||
| JP2009302133A | 2009-12-24 | |||
| JP2013038308A | 2013-02-21 |
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office