A silicon carbide semiconductor device and a manufacturing method for the same

Title:

A silicon carbide semiconductor device and a manufacturing method for the same

Document Type and Number:

Japanese Patent JP6049784

Kind Code:

B2

Abstract:

There is provided a trench-gate type semiconductor device that can prevent breakdown of a gate insulating film caused by a displacement current flowing into a protective diffusion layer at a portion of a trench underlying a gate electrode at a turn-off time and simultaneously improves a current density by narrowing a cell pitch. The semiconductor device has a gate electrode 7 embedded into a trench 5 penetrating a base region 3. The gate electrode 7 is disposed into a lattice shape in a planar view, and a protective diffusion layer 13 is formed in a drift layer 2a at the portion underlying thereof. At least one of blocks divided by the gate electrode 7 is a protective contact region 20 on which the trench 5 is entirely formed. A protective contact 21 for connecting the protective diffusion layer 13 at a bottom portion of the trench 5 and a source electrode 9 is disposed on the protective contact region 20.

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Inventors:

Yasuhiro Kagawa
Akihiko Furukawa
Shiro Hino
Hiroshi Watanabe
Masayuki Imaizumi

Application Number:

JP2015042399A

Publication Date:

December 21, 2016

Filing Date:

March 04, 2015

Export Citation:

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Assignee:

Mitsubishi Electric Corporation

International Classes:

H01L29/78; H01L21/336; H01L29/06; H01L29/12

Domestic Patent References:

JP7263692A
JP5007002A
JP2005501408A
JP2001511315A
JP2000509559A
JP2009043966A

Attorney, Agent or Firm:

Yoshitake Hidetoshi
Takahiro Arita

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