Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
A silicon carbide semiconductor device and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6108330
Kind Code:
B2
More Like This:
JP2023005683SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
JP7240970Semiconductor device and its manufacturing method
JP2008204972SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Inventors:
Takeshi Tales
Shinsuke Harada
Application Number:
JP2011246096A
Publication Date:
April 05, 2017
Filing Date:
November 10, 2011
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
Fuji Electric Co., Ltd.
National Institute of Advanced Industrial Science and Technology
International Classes:
H01L29/12; H01L21/336; H01L29/78
Domestic Patent References:
JP2010040652A
JP2008053343A
Foreign References:
US20110059003
WO2004036655A1
Attorney, Agent or Firm:
Akinori Sakai



 
Previous Patent: Organic semiconductor material

Next Patent: YARN ENDING MACHINE FOR FINE SPINNING FRAME AND ITS OPERATION