Title:
フォトアニール時に温度を均一化させるためのシリコン層
Document Type and Number:
Japanese Patent JP2007525844
Kind Code:
A
Abstract:
An apparatus and method for uniformizing the temperature distribution across a semiconductor wafer during radiation annealing of process regions formed in the wafer is disclosed. The method includes forming a silicon layer atop the upper surface of the wafer and irradiating the layer with one or more pulses of radiation having wavelengths that are substantially absorbed by the silicon layer. The silicon layer acts to uniformly absorb the one or more radiation pulses and then transfers the heat from the absorbed radiation to the process regions across the wafer.
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Inventors:
Somit Tarwar
Michael Or Thompson
Michael Or Thompson
Application Number:
JP2007500894A
Publication Date:
September 06, 2007
Filing Date:
February 18, 2005
Export Citation:
Assignee:
Ultra tech ink
International Classes:
H01L21/265; A21B1/00; A21B1/22; F27B5/14; H01L21/324; H01L21/8238; H01L21/268
Domestic Patent References:
| JPS61289620A | 1986-12-19 | |||
| JP2003059854A | 2003-02-28 | |||
| JP2000138177A | 2000-05-16 | |||
| JP2001319887A | 2001-11-16 | |||
| JP2004503938A | 2004-02-05 | |||
| JP2003059854A | 2003-02-28 | |||
| JPS63265424A | 1988-11-01 | |||
| JPS6242519A | 1987-02-24 | |||
| JP2003059854A | 2003-02-28 | |||
| JPS63265424A | 1988-11-01 | |||
| JPS6242519A | 1987-02-24 |
Attorney, Agent or Firm:
Yukio Fuse
Mitsue Obuchi
Tatsuya Ina
Mitsue Obuchi
Tatsuya Ina