Title:
Silicon-based hardmask layer for inductive self-organization
Document Type and Number:
Japanese Patent JP6284925
Kind Code:
B2
Abstract:
Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.
Inventors:
One Yubao
Hockey mary anne
Guerrero Douglas Jay.
Krishna Mercy Bandana
Cox Robert Sea.
Hockey mary anne
Guerrero Douglas Jay.
Krishna Mercy Bandana
Cox Robert Sea.
Application Number:
JP2015507082A
Publication Date:
February 28, 2018
Filing Date:
April 15, 2013
Export Citation:
Assignee:
Brewer Science INC.
International Classes:
H01L21/027; G03F7/40
Domestic Patent References:
| JP2012064783A | ||||
| JP2012061531A | ||||
| JP2010512032A | ||||
| JP2010056257A | ||||
| JP2011519063A |
Foreign References:
| US20120067843 | ||||
| US20110143095 |
Attorney, Agent or Firm:
Nozomi Watanabe
Haruko Sanwa
Hideaki Ito
Haruko Sanwa
Hideaki Ito