Title:
A slicing method of a semiconductor single crystal ingot
Document Type and Number:
Japanese Patent JP6132621
Kind Code:
B2
Abstract:
An amount of warp of a wafer is not only reduced, but the amount of warp of the wafer is also accurately controlled to a desired amount. The present invention relates to a method for slicing a semiconductor single crystal ingot, by which a cylindrical semiconductor single crystal ingot is bonded to and held by a holder in a state where the ingot is rotated at a predetermined rotation angle around a crystal axis of the ingot different from a center axis of a cylinder of this ingot and the ingot is sliced by a cutting apparatus in this state. The predetermined rotation angle at the time of bonding and holding the ingot with the use of the holder in such a manner that an amount of warp of a wafer sliced out by the cutting apparatus becomes a predetermined amount.
Inventors:
Hiroshi Noguchi
Application Number:
JP2013071236A
Publication Date:
May 24, 2017
Filing Date:
March 29, 2013
Export Citation:
Assignee:
sumco tech xiv Co., Ltd.
International Classes:
H01L21/304
Domestic Patent References:
| JP10182299A | ||||
| JP2012106903A | ||||
| JP2004533347A |
Foreign References:
| WO2012165108A1 | ||||
| WO2012150517A1 |
Attorney, Agent or Firm:
Masayoshi Suda
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