Title:
固体撮像素子
Document Type and Number:
Japanese Patent JP7395502
Kind Code:
B2
Abstract:
A solid-state image sensor (100) according to the present disclosure includes a first semiconductor substrate (200) having a photoelectric conversion element (102) and a second semiconductor substrate (300) facing the first semiconductor substrate (200) with an insulating film (240) interposed therebetween, in which the second semiconductor substrate (300) has an amplification transistor (104) that amplifies an electrical signal output from the photoelectric conversion element (102) on a first main surface (MSa), has a region (302) having a resistance lower than a resistance of the second semiconductor substrate (300) on a second main surface (MSb) opposite to the first main surface (MSa), and is grounded via the region (302).
Inventors:
Tetsuo Goujo
Masami Nagata
Masami Nagata
Application Number:
JP2020557636A
Publication Date:
December 11, 2023
Filing Date:
November 21, 2019
Export Citation:
Assignee:
Sony Semiconductor Solutions Corporation
International Classes:
H01L27/146; H01L21/8234; H01L27/00; H01L27/06; H01L27/088; H04N25/70; H04N25/704; H04N25/705
Domestic Patent References:
| JP2016086164A | ||||
| JP2000196089A | ||||
| JP2013232471A | ||||
| JP2013118345A |
Foreign References:
| WO2013161331A1 | ||||
| WO2017057277A1 | ||||
| US20160118425 | ||||
| US20180294300 | ||||
| EP3358620A1 |
Attorney, Agent or Firm:
Sakai International Patent Office