Title:
A spin electronic memory, the information storage method, and an information reproduction mode
Document Type and Number:
Japanese Patent JP6124320
Kind Code:
B2
Abstract:
[Solution] A spin electronic memory of the present invention is characterized by being formed by laminating at least a pair of electrodes (1, 2), a first alloy layer (5) that is mainly composed of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe or Bi2Se3 and has a thickness of from 2 nm to 10 nm (inclusive), and a second alloy layer (4) that is mainly composed of an alloy represented by general formula (1). This spin electronic memory is also characterized by comprising recording layers (6a, 6b, 6c) that are arranged between the electrodes (1, 2) and a spin injection layer (7) which is formed of a magnetic material that is to be magnetized, and which injects spin-polarized electrons into the recording layers. M1-xTex (1) In formula (1), M represents a Ge atom, an Al atom or an Si atom, and x represents a number of 0.5 or more but less than 1.
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Inventors:
Junji Tominaga
Application Number:
JP2015547678A
Publication Date:
May 10, 2017
Filing Date:
September 19, 2014
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
International Classes:
H01L21/8246; G11C11/15; H01L27/105; H01L29/82
Domestic Patent References:
| JP2008047566A | ||||
| JP5750791B2 | ||||
| JP2013051245A | ||||
| JP2011138924A |
Foreign References:
| WO2013125101A1 |
Other References:
富永淳二,GeTe/Sb2Te3超格子相変化メモリに現れるトポロジカル絶縁性とスピントロニクスへの展開,日本物理学会講演概要集,日本,一般社団法人日本物理学会,2013年 8月26日,第68巻第2号第4分冊,p.603
Attorney, Agent or Firm:
Shin Shioda