A spin transfer torque storage cell, memory storage

Title:

A spin transfer torque storage cell, memory storage

Document Type and Number:

Japanese Patent JP6028834

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a storage element which has high coercive force and can improve thermal stability without increasing write current.SOLUTION: A storage element 3 comprises: a storage layer 17 for holding information by a magnetization state of a magnetic substance; a magnetization fixed layer 15 having magnetization which serves as reference for the information stored in the storage layer 17; an intermediate layer 16 of a nonmagnetic substance provided between the storage layer 17 and the magnetization fixed layer 15; a magnetic coupling layer 19 provided adjacent to the magnetization fixed layer 15 and provided on an opposite side to the intermediate layer 16; and a high coercive force layer 20 provided adjacent to the magnetic coupling layer 19. The storage element stores information by inverting magnetization of the storage layer 17 by utilizing spin torque magnetization reversal occurring in association with current flowing in a lamination direction of a layer structure having the storage layer 17, the intermediate layer 16, and the magnetization fixed layer 15. The magnetization coupling layer 19 is composed of a laminate structure of two layers.

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Inventors:

Hiroyuki Omori
Masatoshi Hosomi
Kazuhiro Bessho
Yutaka Higo
Yamane Kazuyo
Hiroyuki Uchida
Tetsuya Asayama

Application Number:

JP2015118982A

Publication Date:

November 24, 2016

Filing Date:

June 12, 2015

Export Citation:

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Assignee:

ソニー株式会社

International Classes:

H01L21/8246; H01L27/105; H01L29/82; H01L43/08; H01L43/10

Domestic Patent References:

JP2008147522A
JP2007299931A
JP2010010720A

Foreign References:

WO2010137679A1
US20080140922
EP1933338A1
US20070253120
WO2011030529A1
WO2010100678A1
WO2011027404A1

Attorney, Agent or Firm:

Masanobu Iwata
Hiroto Nakagawa
Nobuo Suzuki
Atsuo Waki

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