Title:
POWER SUPPLY POTENTIAL SUPPLY CIRCUIT
Document Type and Number:
Japanese Patent JP2565116
Kind Code:
B2
Abstract:
PURPOSE: To provide the power supply potential supply circuit high in electrostatic resistance and the integration.
CONSTITUTION: A P-channel MOSFET 1 and an N-channel MOSFET 2 are provided. The source electrodes of the P-channel MOSFET 1 and the base electrodes are connected to a high-potential power supply terminal 3. The source electrodes of the N-channel MOSFET 2 and the base electrodes are connected to a low-potential power supply terminal 4. The drain electrodes of the P- channel MOSFET 1 and the gate electrodes of the N-channel MOSFET 2 are connected to make a high-level output terminal 5. The gate electrodes of the P-channel MOSFET 1 and the drain electrodes of the N-channel MOSFET 2 are connected to make a low-level output terminal 6. Thus, the potential of both high and low levels can be supplied.
Inventors:
TAKAYAMA SHOJI
Application Number:
JP28892293A
Publication Date:
December 18, 1996
Filing Date:
November 18, 1993
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H05F3/02; H03K19/003; (IPC1-7): H03K19/003; H05F3/02
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)