Title:
The sputtering target consisting of a high purity lantern
Document Type and Number:
Japanese Patent JP6099018
Kind Code:
B2
Abstract:
The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-5N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700°C to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component.
Inventors:
Masahiro Takahata
Kazuyuki Sato
Narita Satoyasu
Gohara Takeshi
Kazuyuki Sato
Narita Satoyasu
Gohara Takeshi
Application Number:
JP2013207810A
Publication Date:
March 22, 2017
Filing Date:
October 03, 2013
Export Citation:
Assignee:
JX Nippon Mining & Metals Co., Ltd.
International Classes:
C22B59/00; C22B9/04; C22B9/22; C22C1/02; C22C28/00; C23C14/14; C23C14/34; C25C3/34; H01L21/285
Foreign References:
| WO2009084318A1 |
Other References:
佐藤貴則,三村耕司,一色実,金属Ce,Laのプラズマ帯溶融精製,日本金属学会講演概要,日本金属学会,2006年 3月21日,Vol.138th,304
MIMURA Kouji 外2名,Purification of lanthanum and cerium by plasma arc zone melting,J Mater Sci,米国,2008年 4月,Vol.43 No.8,Page.2721-2730
MIMURA Kouji 外2名,Purification of lanthanum and cerium by plasma arc zone melting,J Mater Sci,米国,2008年 4月,Vol.43 No.8,Page.2721-2730
Attorney, Agent or Firm:
Isamu Ogoshi
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