Title:
スパッタリングターゲット及びその製造方法
Document Type and Number:
Japanese Patent JP5594618
Kind Code:
B1
Abstract:
A sputtering target, which has excellent mechanical workability; and makes it possible to deposit a film of a compound including Cu and Ga as major components, is provided. The sputtering target includes: with respect to all of the metal elements in the sputtering target, 15.0 to 50.0 atomic% of Ga; 0.1 to 10.0 total atomic% of one or more metal elements selected from Al, Zn, Sn, Ag, and Mg; and the Cu balance and inevitable impurities. In the sputtering target, the theoretical density is 95% or more, and the oxygen content is 800 weight ppm or less.
Inventors:
Tension 守斌
Keita Umemoto
Keita Umemoto
Application Number:
JP2014006532A
Publication Date:
September 24, 2014
Filing Date:
January 17, 2014
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP.
International Classes:
C23C14/34; B22F3/10; B22F3/15; C22C1/02; C22C1/04; C22C9/00; C22C9/02; C22C28/00
Attorney, Agent or Firm:
Shuichi Kageyama
Miyake Masayuki
Yasuyuki Kurachi
Kazuo Tomita
Miyake Masayuki
Yasuyuki Kurachi
Kazuo Tomita