Title:
記憶素子、メモリ
Document Type and Number:
Japanese Patent JP5040105
Kind Code:
B2
Abstract:
A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
Inventors:
Yutaka Higo
Masatoshi Hosomi
Kazuhiro Bessho
Tetsuya Yamamoto
Hiroyuki Omori
Yamane Kazuyo
Yuki Oishi
Hiroshi Kano
Masatoshi Hosomi
Kazuhiro Bessho
Tetsuya Yamamoto
Hiroyuki Omori
Yamane Kazuyo
Yuki Oishi
Hiroshi Kano
Application Number:
JP2005348112A
Publication Date:
October 03, 2012
Filing Date:
December 01, 2005
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L43/08; H01L21/8246; H01L27/105; H01L29/82; H01L43/10
Domestic Patent References:
JP2004063592A | ||||
JP2004172599A | ||||
JP2001156357A | ||||
JP2009512204A |
Foreign References:
US20050254287 | ||||
WO2004029973A1 |
Attorney, Agent or Firm:
Yoshitsuno Kakuda
Hitoshi Ito
Hitoshi Ito