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Title:
記憶素子、メモリ
Document Type and Number:
Japanese Patent JP5040105
Kind Code:
B2
Abstract:
A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Inventors:
Yutaka Higo
Masatoshi Hosomi
Kazuhiro Bessho
Tetsuya Yamamoto
Hiroyuki Omori
Yamane Kazuyo
Yuki Oishi
Hiroshi Kano
Application Number:
JP2005348112A
Publication Date:
October 03, 2012
Filing Date:
December 01, 2005
Export Citation:
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Assignee:
ソニー株式会社
International Classes:
H01L43/08; H01L21/8246; H01L27/105; H01L29/82; H01L43/10
Domestic Patent References:
JP2004063592A
JP2004172599A
JP2001156357A
JP2009512204A
Foreign References:
US20050254287
WO2004029973A1
Attorney, Agent or Firm:
Yoshitsuno Kakuda
Hitoshi Ito



 
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