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Title:
Structure and film formation method
Document Type and Number:
Japanese Patent JP6361665
Kind Code:
B2
Abstract:
Provided is a structure configured such that even when resin, such as methacryl resin, exhibiting a low adhesion to a metal thin film is used, the resin and the metal thin film are firmly stacked in close contact with each other, and a film formation method capable of manufacturing a structure in which a metal thin film is, with a high adhesion, formed on a resin work exhibiting a low adhesion to the metal thin film, wherein the structure is configured such that an Al thin film 102 is, by sputtering, formed on a work W made of methacryl resin to form a stack of the work W and the Al thin film 102, and has a mixed region 101 of Al, Si, O, and C between the work W and the Al thin film 102. In the mixed region 101, Al is covalently bound to any one of Si, O, and C, or Al, Si, O, and C form a diffusion mixed layer.

Inventors:
Ichioka sacred vegetables
Toshinori Yoshimuta
Satoshi Tokuda
Daisuke Imai
Satoru Ozaki
Tokutake Yu
Application Number:
JP2015559878A
Publication Date:
July 25, 2018
Filing Date:
January 20, 2015
Export Citation:
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Assignee:
SHIMADZU CORPORATION
International Classes:
B32B15/08; C23C14/14; C23C14/20; C23C16/42; C23C16/509
Domestic Patent References:
JP2011203725A
JP2008504994A
JP8192492A
JP2009107333A
JP2013226718A
JP2002228815A
JP5005801A
JP4235502A
JP2002248355A
JP2010058111A
JP8086908A
JP2005004892A
JP7305166A
Foreign References:
WO2008133136A1
Attorney, Agent or Firm:
Takashi Otsubo



 
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