Title:
A substrate processing device, a temperature control method, a manufacturing method of a semiconductor device, and a recording medium
Document Type and Number:
Japanese Patent JP6150937
Kind Code:
B2
Abstract:
A substrate processing apparatus includes a substrate heating part, a power supply part and a control device. The control device measures a temperature of the substrate while controlling the substrate heating part such that the temperature of the substrate reaches a first control temperature higher than the target temperature using power supplied by the power supply part. The device measures the temperature of the substrate for a second control temperature lower than the target temperature, and selects the power ratio value providing the best temperature uniformity in the plane of the substrate and a temperature average value for the selected power ratio value from a result of the measurement. The device calculates a control temperature and the power ratio value for the target temperature based on the selected temperature average value and the power ratio value for each of the first and second control temperature.
Inventors:
Takashi Yokawa
Yasuhiro Mizuguchi
Makoto Nomura
Saito alone
Yasuhiro Mizuguchi
Makoto Nomura
Saito alone
Application Number:
JP2016510231A
Publication Date:
June 21, 2017
Filing Date:
March 13, 2015
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/02; C23C14/54; C23C16/52
Domestic Patent References:
| JP2007335500A | ||||
| JP200866559A |