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Title:
PROCESSOR AND ION IMPLANTATION DEVICE
Document Type and Number:
Japanese Patent JPH0613017
Kind Code:
A
Abstract:

PURPOSE: To suppress the generation of particles from the surface of a bias electrode in an ion implantation device.

CONSTITUTION: A Faraday cup 2 is arranged directly before a semiconductor wafer W on a rotational disc 17, and a semiconductor film 6 such as SiC is formed on the surface (the surface of the inside) of a conductor 5 such as carbon, in the side of the Faraday cup 2 into which an ion beam penetrates, while two bias electrodes 3A, 3B(3) are provided. The inner wall surface of each of these electrodes is formed into circle. A bias voltage of -2KV, for example, is applied to the bias electrodes 3 so that no electron jumps out from the outside of the Faraday cup 2. Sputtered grains from the surface of a wafer W are adhered to the surface of the bias electrodes 3, and an insulating film is thus formed. Electric discharge is prevented due to the resistance of a semiconductor, even when positive charges are stored on the surface of the insulating film and exceed the withstand charge amount of the insulating film, and the generation of particles can thus be suppressed.


Inventors:
ONO HIROO
KIKUCHI SHUJI
TOMOYASU MASAYUKI
Application Number:
JP19335292A
Publication Date:
January 21, 1994
Filing Date:
June 27, 1992
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H01J37/317; H01L21/265; (IPC1-7): H01J37/317; H01L21/265
Attorney, Agent or Firm:
Toshio Inoue



 
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