Title:
A surface-emitting type semiconductor laser and an optical transmission device
Document Type and Number:
Japanese Patent JP6240429
Kind Code:
B2
Abstract:
A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.
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Inventors:
Fumio Koyama
Hermed daryl
Takashi Kondo
Naoki Castle
Kazutaka Takeda
Hideo Nakayama
Hermed daryl
Takashi Kondo
Naoki Castle
Kazutaka Takeda
Hideo Nakayama
Application Number:
JP2013163757A
Publication Date:
November 29, 2017
Filing Date:
August 07, 2013
Export Citation:
Assignee:
National University Corporation Tokyo Institute of Technology
Fuji Xerox Co., Ltd
Fuji Xerox Co., Ltd
International Classes:
H01S5/183
Domestic Patent References:
| JP2005045243A | ||||
| JP2012049180A | ||||
| JP2000294872A | ||||
| JP2001168475A | ||||
| JP2005252240A |
Foreign References:
| US5903590 | ||||
| US5446754 |
Attorney, Agent or Firm:
Kyozo Katayose
Shuhei Katayama
Shuhei Katayama