Title:
半導体実装用導電基材の表面処理方法、ならびにこの処理方法を用いてなる導電基材および半導体パッケージ
Document Type and Number:
Japanese Patent JP5692108
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a surface treatment method of a conductive base material for packaging a semiconductor which allows for good adhesion to a sealing material or the like, minimization of degradation in electrical characteristics and heat dissipation, low temperature processing, excellent productivity, and reduction of marks such as scratches or rubbing.SOLUTION: The surface treatment method of a conductive base material for packaging a semiconductor includes a roughening step for forming a roughened shape on the surface of a conductive base material for packaging a semiconductor by bringing it into contact with a chemical roughening liquid containing a corrosion inhibitor, sulphuric acid and hydrogen peroxide, the corrosion inhibitor containing 1,2,3-benzotriazol and 5-amino-tetrazole, and a film removing step for removing an organic film formed on the surface in the roughening step by bringing the organic film into contact with an alkaline solution containing amine following to the roughening step.
Inventors:
Fumio Inoue
Tomoaki Yamashita
Hirohisa Hiroyama
Kazuhiko Sakaobe
Tomoaki Yamashita
Hirohisa Hiroyama
Kazuhiko Sakaobe
Application Number:
JP2012021931A
Publication Date:
April 01, 2015
Filing Date:
February 03, 2012
Export Citation:
Assignee:
Hitachi Chemical Co., Ltd.
International Classes:
H01L23/50; C23F1/18; C23F11/04
Domestic Patent References:
JP2005187945A | ||||
JP2006019655A | ||||
JP2002036430A | ||||
JP2007016263A | ||||
JP2002124762A | ||||
JP2000064067A | ||||
JP2009059777A |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Iwa Saki Kokuni
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
Iwa Saki Kokuni
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu